IRF6628TRPBF
MOSFET N-CH 25V 27A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6628TRPBF is an N-Channel Power MOSFET featuring a 25V drain-source breakdown voltage. This device offers a continuous drain current capability of 27A at ambient temperature and an impressive 160A at case temperature. The IRF6628TRPBF boasts a low on-resistance of 2.5mOhm maximum at 27A and 10V Vgs. Its DIRECTFET™ MX package provides efficient thermal performance, with a maximum power dissipation of 2.8W at ambient and 96W at case temperature. Key parameters include a gate charge (Qg) of 47nC at 4.5V Vgs and input capacitance (Ciss) of 3770pF at 15V Vds. The operating temperature range is -40°C to 150°C. This MOSFET is suitable for high-current switching applications across various industries, including automotive and industrial power systems. The component is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 27A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 96W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3770 pF @ 15 V |
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