IRF6628TR1PBF
MOSFET N-CH 25V 27A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6628TR1PBF is an N-Channel MOSFET designed for high-efficiency power conversion. It features a Drain-to-Source Voltage (Vdss) of 25 V and a continuous drain current (Id) of 27 A at 25°C ambient, scaling to 160 A at 25°C case temperature. The device offers a low on-resistance (Rds On) of 2.5 mOhm at 27 A and 10 V Vgs. With a maximum power dissipation of 2.8 W (Ta) and 96 W (Tc), it is suitable for demanding applications. Key parameters include a Gate Charge (Qg) of 47 nC at 4.5 V Vgs and an Input Capacitance (Ciss) of 3770 pF at 15 V Vds. The MOSFET operates across a temperature range of -40°C to 150°C (TJ). This component is housed in a DirectFET™ Isometric MX package, supplied on tape and reel. Its performance characteristics make it suitable for use in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 27A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 96W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 100µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3770 pF @ 15 V |
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