IRF6626TR1PBF
MOSFET N-CH 30V 16A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6626TR1PBF is a N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 30V drain-source voltage and a continuous drain current capability of 16A at 25°C ambient and 72A at 25°C case temperature. With a low on-resistance of 5.4mOhm maximum at 16A and 10V gate-source voltage, it minimizes conduction losses. The MOSFET exhibits a gate charge of 29 nC maximum at 4.5V gate-source voltage and an input capacitance of 2380 pF maximum at 15V drain-source voltage. Rated for a maximum power dissipation of 2.2W ambient and 42W case, it operates across a temperature range of -40°C to 150°C. The component utilizes Infineon's DIRECTFET™ Isometric ST package for surface mount assembly and is supplied on tape and reel. This MOSFET is suitable for use in power management, automotive, and industrial applications where efficient power conversion is critical.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric ST |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 72A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 250µA |
| Supplier Device Package | DIRECTFET™ ST |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2380 pF @ 15 V |
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