IRF6626TR1
MOSFET N-CH 30V 16A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6626TR1 is a high-performance N-Channel power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and a continuous drain current rating of 16A at ambient temperature (72A at case temperature). With a low on-resistance of 5.4mOhm maximum at 16A and 10V Vgs, it minimizes conduction losses. The IRF6626TR1 utilizes Infineon's advanced DIRECTFET™ ST package, offering excellent thermal performance with a maximum power dissipation of 42W at case temperature. Key parameters include a gate charge (Qg) of 29nC max at 4.5V Vgs and input capacitance (Ciss) of 2380pF max at 15V Vds. Operating across a temperature range of -40°C to 150°C (TJ), this component is suitable for use in automotive, industrial power, and high-efficiency power supply designs.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric ST |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 72A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 250µA |
| Supplier Device Package | DIRECTFET™ ST |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2380 pF @ 15 V |
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