IRF6623TR1PBF
MOSFET N-CH 20V 16A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6623TR1PBF is an N-Channel Power MOSFET designed for high-efficiency applications. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 16A (at 25°C ambient) and 55A (at 25°C case temperature). The IRF6623TR1PBF offers a low on-resistance of 5.7mOhm maximum at 15A and 10V Vgs, with a recommended gate drive range of 4.5V to 10V. Its DIRECTFET™ Isometric ST package provides excellent thermal performance, enabling a maximum power dissipation of 1.4W (ambient) and 42W (case). Key electrical parameters include a maximum gate charge of 17 nC at 4.5V Vgs and an input capacitance of 1360 pF maximum at 10V Vds. This MOSFET is suitable for use in power management, automotive, and industrial applications requiring robust switching performance. The device operates across a temperature range of -40°C to 150°C (TJ) and is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric ST |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | DIRECTFET™ ST |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1360 pF @ 10 V |
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