IRF6623TR1
MOSFET N-CH 20V 16A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6623TR1 is an N-Channel Power MOSFET designed for demanding applications. This component features a 20V drain-source breakdown voltage and offers continuous drain current capabilities of 16A at 25°C ambient and 55A at 25°C case temperature. Its low on-resistance of 5.7mOhm at 15A and 10V gate-source drive ensures efficient power transfer. The IRF6623TR1 utilizes DirectFET™ Isometric ST packaging for superior thermal performance, allowing for power dissipation of 1.4W ambient or 42W case. Key electrical characteristics include a maximum gate charge of 17 nC at 4.5V and an input capacitance of 1360 pF at 10V. This device operates across a temperature range of -40°C to 150°C. Applications include power management, automotive systems, and industrial control.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric ST |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | DIRECTFET™ ST |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1360 pF @ 10 V |
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