IRF6622TRPBF
MOSFET N-CH 25V 15A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6622TRPBF is an N-Channel power MOSFET designed for high-density power management applications. This DirectFET™ SQ packaged component features a 25V drain-source breakdown voltage and a continuous drain current of 15A at ambient temperature, scaling to 59A at case temperature. With a low Rds(on) of 6.3mOhm maximum at 15A and 10V Vgs, it offers efficient power transfer. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate charge of 17 nC at 4.5V and input capacitance of 1450 pF at 13V. Power dissipation is rated at 2.2W ambient and 34W at case temperature. Operating across a junction temperature range of -40°C to 150°C, this RoHS compliant MOSFET is suitable for use in automotive, industrial control, and power supply sectors. It is supplied on tape and reel.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric SQ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 59A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 34W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | DIRECTFET™ SQ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 13 V |
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