IRF6622TR1PBF
MOSFET N-CH 25V 15A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6622TR1PBF is an N-Channel MOSFET designed for high-efficiency power management applications. This component features a 25V drain-source voltage and a continuous drain current capability of 15A at ambient temperature and 59A at case temperature. Its low on-resistance of 6.3mOhm at 15A and 10V gate-source drive voltage, combined with a gate charge of 17nC at 4.5V, ensures excellent switching performance.
The IRF6622TR1PBF utilizes Infineon's DirectFET™ SQ package for superior thermal management, offering a power dissipation of 2.2W (Ta) and 34W (Tc). With a maximum gate-source voltage of ±20V and a threshold voltage of 2.35V at 25µA, it provides robust operation. This MOSFET is suitable for use in automotive, industrial, and consumer electronics sectors requiring efficient power conversion and control. The component is supplied in Tape & Reel packaging for automated assembly.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric SQ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 59A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 34W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | DIRECTFET™ SQ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 13 V |
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