IRF6621TRPBF
MOSFET N-CH 30V 12A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel MOSFET, part number IRF6621TRPBF, offers 30V drain-source voltage and 12A continuous drain current at 25°C ambient, scaling to 55A continuous drain current at 25°C case temperature. This MOSFET features a low Rds(on) of 9.1mOhm maximum at 12A and 10V Vgs, achieved with a 4.5V to 10V gate drive. The device has a maximum gate charge of 17.5 nC at 4.5V Vgs and an input capacitance (Ciss) of 1460 pF maximum at 15V Vds. Power dissipation is rated at 2.2W (Ta) and 42W (Tc). The IRF6621TRPBF is housed in a DirectFET™ Isometric SQ package for surface mounting and operates across a temperature range of -40°C to 150°C. This component is utilized in applications such as power management, DC-DC conversion, and load switching within the automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric SQ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | DIRECTFET™ SQ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1460 pF @ 15 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
