IRF6621TR1PBF
MOSFET N-CH 30V 12A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6621TR1PBF. This N-Channel MOSFET features a 30V Drain-to-Source Voltage (Vdss) and a continuous drain current of 12A at 25°C ambient, scaling to 55A under thermal management (Tc). Key performance metrics include a maximum Rds(on) of 9.1mOhm at 12A/10V, supported by a gate charge of 17.5 nC at 4.5V. Input capacitance (Ciss) is rated at 1460 pF maximum at 15V. The device operates within an extended temperature range of -40°C to 150°C and offers a power dissipation of 2.2W (Ta) up to 42W (Tc). Designed for surface mounting, this component utilizes the DIRECTFET™ Isometric SQ package and is supplied on tape and reel. This MOSFET is well-suited for applications in power management, automotive systems, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric SQ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | DIRECTFET™ SQ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1460 pF @ 15 V |
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