IRF6621TR1
MOSFET N-CH 30V 12A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel MOSFET, part number IRF6621TR1, features a 30V drain-source voltage and a continuous drain current of 12A at ambient temperature, scaling to 55A at case temperature. This device offers a low on-resistance of 9.1mOhm maximum at 12A and 10V. The gate charge is specified at 17.5 nC maximum at 4.5V, with a gate drive voltage range of 4.5V to 10V. Input capacitance (Ciss) is 1460 pF maximum at 15V. Designed for surface mounting, it is housed in a DirectFET™ Isometric SQ package. The component’s robust thermal capabilities are highlighted by a maximum power dissipation of 2.2W at ambient and 42W at case temperature. This MOSFET is suitable for applications in the automotive and industrial sectors requiring efficient power switching. It operates across a temperature range of -40°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric SQ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | DIRECTFET™ SQ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1460 pF @ 15 V |
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