IRF6620TRPBF
MOSFET N-CH 20V 27A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6620TRPBF is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a 20V drain-to-source voltage rating and a continuous drain current capability of 27A at ambient temperature (4.5V, 10V drive voltages) and 150A at case temperature. The low on-resistance of 2.7mOhm at 27A and 10V Vgs, coupled with a maximum gate charge of 42nC at 4.5V Vgs, facilitates superior switching performance. With a maximum power dissipation of 2.8W (Ta) and 89W (Tc), this device is suitable for demanding thermal environments. Key parameters include an input capacitance (Ciss) of 4130pF at 10V Vds and a threshold voltage (Vgs(th)) of 2.45V at 250µA. The IRF6620TRPBF utilizes Infineon's DIRECTFET™ Isometric MX surface mount package, provided on tape and reel. This MOSFET is commonly employed in automotive, industrial, and computing sectors requiring robust power management solutions.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 27A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4130 pF @ 10 V |
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