IRF6620TR1PBF
MOSFET N-CH 20V 27A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® MOSFET N-Channel IRF6620TR1PBF. This DirectFET™ MX packaged component features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 27A at 25°C ambient, scaling to 150A at 25°C case temperature. The low on-resistance of 2.7mOhm is achieved at 27A and 10V gate-source voltage. With a maximum power dissipation of 2.8W (ambient) and 89W (case), this device supports a gate drive range from 4.5V to 10V and has a typical gate charge (Qg) of 42 nC at 4.5V. Input capacitance (Ciss) is rated at 4130 pF max at 10V. Operating temperature range is -40°C to 150°C (TJ). This component is commonly utilized in power management applications across automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 27A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4130 pF @ 10 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
