IRF6619TRPBF
MOSFET N-CH 20V 30A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' HEXFET® IRF6619TRPBF is an N-channel power MOSFET designed for high-efficiency applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 30A at ambient temperature (Ta) and 150A at case temperature (Tc). The low on-resistance (Rds On) of 2.2mOhm at 30A and 10V gate-source voltage (Vgs) ensures minimal conduction losses. With a maximum power dissipation of 2.8W at Ta and 89W at Tc, this MOSFET is suitable for demanding thermal environments. The gate charge (Qg) is 57 nC at 4.5V Vgs, and input capacitance (Ciss) is 5040 pF at 10V Vds. The device operates from a 4.5V to 10V gate drive and has a ±20V Vgs maximum rating. Packaged in a Tape & Reel (TR) for automated assembly, the IRF6619TRPBF utilizes the DirectFET™ Isometric MX package for enhanced thermal performance and reduced parasitic inductance. This MOSFET is commonly found in power management solutions for automotive, industrial, and computing sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5040 pF @ 10 V |
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