IRF6619TR1PBF
MOSFET N-CH 20V 30A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6619TR1PBF is an N-Channel MOSFET designed for high-efficiency power switching applications. This DIRECTFET™ MX packaged component offers a 20V drain-source breakdown voltage and a continuous drain current capability of 30A at ambient temperature (Ta) and 150A at case temperature (Tc). With a low on-resistance of 2.2mOhm at 30A and 10V, it minimizes conduction losses. The device features a maximum gate charge (Qg) of 57 nC at 4.5V and a maximum input capacitance (Ciss) of 5040 pF at 10V. Power dissipation is rated at 2.8W (Ta) and 89W (Tc). Operating across a temperature range of -40°C to 150°C (TJ), this surface-mount MOSFET is suitable for demanding applications in automotive, industrial power, and consumer electronics sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5040 pF @ 10 V |
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