IRF6619TR1
MOSFET N-CH 20V 30A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6619TR1 is an N-Channel MOSFET designed for high-density power management applications. This component features a 20 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 30 A at 25°C ambient, scaling to 150 A at 25°C case temperature. The low on-resistance of 2.2 mOhm is achieved at 30 A and 10 V Vgs, configurable with drive voltages between 4.5 V and 10 V. With a maximum gate charge (Qg) of 57 nC at 4.5 V Vgs and input capacitance (Ciss) of 5040 pF at 10 V Vds, it supports efficient switching. The power dissipation is rated at 2.8 W ambient and 89 W case. Packaged in a DirectFET™ Isometric MX, suitable for surface mounting and supplied on tape and reel, this MOSFET is utilized in automotive, industrial, and consumer electronics sectors. The maximum gate-source voltage (Vgs) is ±20V.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5040 pF @ 10 V |
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