IRF6619
MOSFET N-CH 20V 30A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6619 is an N-Channel power MOSFET designed for high-performance applications. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 30A at ambient temperature, scaling to 150A at case temperature. With a low on-resistance (Rds On) of 2.2mOhm at 30A and 10V, it offers efficient power handling, dissipating up to 89W at case temperature. The IRF6619 utilizes DIRECTFET™ MX packaging for superior thermal management and integration, suitable for demanding environments. Key electrical characteristics include a Gate Charge (Qg) of 57 nC at 4.5V and an Input Capacitance (Ciss) of 5040 pF at 10V. This MOSFET is ideal for power management solutions in automotive, industrial, and consumer electronics sectors. It operates within a temperature range of -40°C to 150°C and is supplied in a Tape & Reel (TR) package.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5040 pF @ 10 V |
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