IRF6618TRPBF
MOSFET N-CH 30V 30A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF6618TRPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 30A at 25°C ambient, scaling to 170A at 25°C case temperature. The DirectFET™ Isometric MT package offers superior thermal performance, enabling a maximum power dissipation of 89W at 25°C case temperature. With a low on-resistance (Rds On) of 2.2mOhm at 30A and 10V Vgs, and a gate charge (Qg) of 65 nC at 4.5V Vgs, this MOSFET is optimized for fast switching speeds. Operating across a temperature range of -40°C to 150°C, it is suitable for demanding applications in power supplies, automotive systems, and industrial motor control.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MT |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 170A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 250µA |
| Supplier Device Package | DIRECTFET™ MT |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5640 pF @ 15 V |
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