IRF6618TR1PBF
MOSFET N-CH 30V 30A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel MOSFET, part number IRF6618TR1PBF, is engineered for high-performance power management applications. This device features a 30V drain-source voltage rating and boasts a continuous drain current capability of 30A at ambient temperature and 170A at case temperature. The low on-resistance of 2.2 mOhm at 30A and 10V gate-source drive, coupled with a maximum gate charge of 65 nC at 4.5V, ensures efficient switching. It supports a wide gate drive voltage range from 4.5V to 10V. The IRF6618TR1PBF utilizes advanced MOSFET technology and is housed in a surface-mount DIRECTFET™ Isometric MT package, optimized for thermal performance with a maximum power dissipation of 2.8W (Ta) and 89W (Tc). This component is suitable for demanding automotive, industrial, and consumer electronics power systems. It operates across a temperature range of -40°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MT |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 170A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 250µA |
| Supplier Device Package | DIRECTFET™ MT |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5640 pF @ 15 V |
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