IRF6618TR1
MOSFET N-CH 30V 30A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6618TR1 is an N-Channel Power MOSFET featuring 30V drain-to-source voltage and 30A continuous drain current at 25°C ambient, with a pulsed drain current capability of 170A at 25°C case temperature. This surface mount device utilizes DIRECTFET™ Isometric MT packaging for enhanced thermal performance, achieving a maximum power dissipation of 2.8W (ambient) and 89W (case). Key electrical characteristics include a low on-resistance of 2.2mOhm at 30A and 10V gate-source drive, with a maximum gate charge of 65 nC at 4.5V. Input capacitance (Ciss) is rated at 5640 pF at 15V. Operating temperature range is -40°C to 150°C. This component is suitable for applications in power management, automotive, and industrial systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MT |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 170A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 250µA |
| Supplier Device Package | DIRECTFET™ MT |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5640 pF @ 15 V |
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