IRF6618
MOSFET N-CH 30V 30A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6618 is a 30V N-Channel MOSFET designed for high-performance power management applications. This component features an extremely low on-resistance of 2.2mOhm at 30A and 10V Vgs, alongside a continuous drain current rating of 30A at ambient temperature and 170A at case temperature. The IRF6618 offers a maximum power dissipation of 89W at case temperature, enabling efficient operation in demanding environments. Gate charge is specified at 65 nC maximum at 4.5V Vgs, and input capacitance is 5640 pF maximum at 15V Vds. With a wide operating temperature range of -40°C to 150°C, this MOSFET is suitable for use in automotive, industrial, and telecom power systems. The DIRECTFET™ Isometric MT package provides excellent thermal performance and a compact footprint for surface mounting.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MT |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 170A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 250µA |
| Supplier Device Package | DIRECTFET™ MT |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5640 pF @ 15 V |
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