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IRF6617TRPBF

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IRF6617TRPBF

MOSFET N-CH 30V 14A DIRECTFET

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies HEXFET® IRF6617TRPBF is a N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 14A at 25°C ambient, scaling to 55A at 25°C case temperature. The low on-resistance of 8.1mOhm maximum at 15A and 10V gate-source drive, coupled with a low gate charge of 17nC at 4.5V, ensures excellent switching performance. Optimized for high power density, the IRF6617TRPBF utilizes Infineon's DIRECTFET™ Isometric ST package, enabling efficient thermal dissipation with a maximum power dissipation of 2.1W (ambient) and 42W (case). It operates across a wide temperature range of -40°C to 150°C. This component is suitable for demanding applications in industrial, automotive, and consumer electronics where efficient power conversion is critical. The datasheet specifies a Vgs(th) of 2.35V at 250µA and an input capacitance (Ciss) of 1300pF at 15V. The part is supplied in Tape & Reel packaging.

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDirectFET™ Isometric ST
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs8.1mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id2.35V @ 250µA
Supplier Device PackageDIRECTFET™ ST
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 15 V

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