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IRF6617TR1PBF

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IRF6617TR1PBF

MOSFET N-CH 30V 14A DIRECTFET

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies HEXFET® IRF6617TR1PBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current capability of 14A at ambient temperature and 55A at case temperature. The low on-resistance of 8.1mOhm at 15A and 10V Vgs, combined with a maximum gate charge of 17nC at 4.5V Vgs, ensures excellent switching performance. The IRF6617TR1PBF utilizes Infineon’s advanced DIRECTFET™ Isometric ST packaging, offering superior thermal management with a power dissipation of 2.1W at ambient and 42W at case temperature, making it suitable for demanding applications in automotive, industrial, and power supply sectors. Operating across a temperature range of -40°C to 150°C, this MOSFET supports drive voltages from 4.5V to 10V and a maximum gate-source voltage of ±20V.

Additional Information

Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDirectFET™ Isometric ST
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs8.1mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id2.35V @ 250µA
Supplier Device PackageDIRECTFET™ ST
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 15 V

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