IRF6617TR1
MOSFET N-CH 30V 14A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6617TR1 is an N-Channel Power MOSFET designed for high-performance applications. This device features a 30V Drain-to-Source voltage (Vdss) and supports a continuous Drain current of 14A at ambient temperature and 55A at case temperature. The low on-resistance of 8.1mOhm at 15A and 10V, achieved with a 4.5V to 10V gate drive, minimizes conduction losses. With a maximum Gate Charge (Qg) of 17 nC at 4.5V, it ensures efficient switching characteristics. The MOSFET is housed in a DirectFET™ Isometric ST surface mount package, offering excellent thermal performance with a maximum power dissipation of 2.1W (Ta) and 42W (Tc). Operating across a temperature range of -40°C to 150°C (TJ), the IRF6617TR1 is suitable for use in power management, automotive, and industrial automation sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric ST |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.1mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.35V @ 250µA |
| Supplier Device Package | DIRECTFET™ ST |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 15 V |
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