IRF6616TR1PBF
MOSFET N-CH 40V 19A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® MOSFET N-Channel IRF6616TR1PBF, a DirectFET™ Isometric MX packaged device, offers a 40V drain-source voltage and a continuous drain current of 19A at 25°C ambient, scaling to 106A at 25°C case temperature. This MOSFET exhibits a maximum on-resistance of 5mOhm at 19A and 10V gate drive, with a gate charge of 44 nC at 4.5V. Input capacitance (Ciss) is specified at 3765 pF maximum at 20V. Power dissipation is rated at 2.8W ambient and 89W case, with an operating junction temperature range of -40°C to 150°C. Ideal for applications in automotive and industrial power management, this device is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 106A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3765 pF @ 20 V |
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