IRF6616
MOSFET N-CH 30V 19A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF6616 is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-to-source breakdown voltage and a continuous drain current capability of 19A at 25°C ambient and 106A at 25°C case temperature. With a low on-resistance of 5mOhm at 19A and 10V gate drive, the IRF6616 minimizes conduction losses. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage of ±20V. Key parameters include a maximum gate charge of 44 nC at 4.5V and an input capacitance of 3765 pF at 20V. The IRF6616 utilizes the DirectFET™ Isometric MX package for surface mounting, offering excellent thermal performance with a maximum power dissipation of 89W at 25°C case temperature. This component is commonly found in automotive, industrial, and server power supply designs. It operates across a wide temperature range from -40°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 106A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3765 pF @ 20 V |
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