IRF6614TRPBF
MOSFET N-CH 40V 12.7A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6614TRPBF is an N-Channel MOSFET designed for high-efficiency power management. This component features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 12.7A at 25°C ambient, scaling to 55A at 25°C case temperature. The low on-resistance of 8.3mOhm (max) at 12.7A and 10V gate-source voltage ensures minimal conduction losses. With a maximum gate charge (Qg) of 29 nC at 4.5V and input capacitance (Ciss) of 2560 pF at 20V, it offers optimized switching performance. The device supports a wide drive voltage range from 4.5V to 10V and operates within an extended temperature range of -40°C to 150°C. The DIRECTFET™ Isometric ST package facilitates efficient heat dissipation, enabling power dissipation up to 42W (Tc). This MOSFET is commonly utilized in automotive, industrial, and communication infrastructure applications requiring robust power switching.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric ST |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.7A (Ta), 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.3mOhm @ 12.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | DIRECTFET™ ST |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2560 pF @ 20 V |
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