IRF6614TR1PBF
MOSFET N-CH 40V 12.7A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel MOSFET, part number IRF6614TR1PBF, offers a 40V drain-to-source voltage (Vdss) and supports a continuous drain current of 12.7A at 25°C ambient (55A at 25°C case). This DirectFET™ Isometric ST package component features a low on-resistance of 8.3mOhm maximum at 12.7A and 10V Vgs. Key parameters include a maximum gate charge of 29nC at 4.5V Vgs and an input capacitance of 2560pF maximum at 20V Vds. The device operates within a temperature range of -40°C to 150°C and has a maximum power dissipation of 2.1W ambient or 42W case. It is suitable for surface mounting and is supplied on tape and reel. This component finds application in power management and high-frequency switching circuits across various industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric ST |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.7A (Ta), 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.3mOhm @ 12.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | DIRECTFET™ ST |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2560 pF @ 20 V |
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