IRF6614TR1
MOSFET N-CH 40V 12.7A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6614TR1 is a 40V N-Channel MOSFET designed for high-efficiency power conversion. This device features a low Rds(on) of 8.3mOhm at 12.7A and 10V Vgs, with a maximum gate charge of 29nC at 4.5V. The IRF6614TR1 offers a continuous drain current of 12.7A at 25°C ambient and 55A at 25°C case temperature, with a maximum power dissipation of 2.1W (ambient) and 42W (case). Its DIRECTFET™ Isometric ST package provides excellent thermal performance for demanding applications. This component is suitable for use in power management systems, automotive electronics, and industrial automation. Operating temperature range is -40°C to 150°C (TJ). It is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric ST |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.7A (Ta), 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.3mOhm @ 12.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | DIRECTFET™ ST |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2560 pF @ 20 V |
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