IRF6614
MOSFET N-CH 40V 12.7A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6614 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 12.7A at ambient temperature, scaling to 55A under typical case temperature conditions. The low on-resistance of 8.3mOhm at 12.7A and 10V gate-source voltage, coupled with a maximum gate charge of 29nC at 4.5V, ensures efficient switching performance. The IRF6614 boasts a maximum power dissipation of 2.1W (Ta) and 42W (Tc), and operates within an extended temperature range of -40°C to 150°C. Its DIRECTFET™ Isometric ST package facilitates surface mounting and thermal management. This MOSFET is suitable for power supply, motor control, and power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric ST |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.7A (Ta), 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.3mOhm @ 12.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | DIRECTFET™ ST |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2560 pF @ 20 V |
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