IRF6613TR1PBF
MOSFET N-CH 40V 23A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6613TR1PBF is an N-Channel power MOSFET designed for efficient power management applications. This DirectFET™ Isometric MT packaged device features a 40V Drain-Source voltage rating and supports a continuous drain current of 23A at ambient temperature (Ta) and 150A at case temperature (Tc). The Rds(On) is specified as a maximum of 3.4mOhm at 23A and 10V. Key parameters include a gate charge (Qg) of 63 nC at 4.5V and input capacitance (Ciss) of 5950 pF at 15V. The MOSFET offers a maximum power dissipation of 2.8W (Ta) and 89W (Tc) and operates across a temperature range of -40°C to 150°C. This component finds application in sectors such as automotive, industrial automation, and power supplies.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MT |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 23A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | DIRECTFET™ MT |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5950 pF @ 15 V |
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