IRF6613TR1
MOSFET N-CH 40V 23A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6613TR1 is an N-Channel MOSFET designed for high-efficiency power management applications. This DirectFET™ Isometric MT packaged device offers a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 23A at 25°C ambient, and 150A at 25°C case temperature. The low on-resistance (Rds On) of 3.4mOhm is achieved at 23A and 10V Vgs. Key parameters include a maximum gate charge (Qg) of 63 nC at 4.5V Vgs and an input capacitance (Ciss) of 5950 pF at 15V Vds. Power dissipation is rated at 2.8W (Ta) and 89W (Tc). The device supports a drive voltage range from 4.5V to 10V and operates within an extended temperature range of -40°C to 150°C. This component is commonly utilized in automotive, industrial, and consumer electronics sectors requiring robust power switching.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MT |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 23A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | DIRECTFET™ MT |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5950 pF @ 15 V |
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