IRF6612TRPBF
MOSFET N-CH 30V 24A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6612TRPBF is an N-Channel Power MOSFET designed for high-efficiency applications. This component features a 30 V drain-to-source voltage (Vdss) and a continuous drain current of 24 A at 25°C (Ta) and 136 A at 25°C (Tc). The IRF6612TRPBF offers a low on-resistance of 3.3 mOhm maximum at 24 A and 10 V, with a gate charge (Qg) of 45 nC maximum at 4.5 V. Input capacitance (Ciss) is 3970 pF maximum at 15 V. Power dissipation is rated at 2.8 W (Ta) and 89 W (Tc). The device utilizes DirectFET™ MX packaging for superior thermal performance and is suitable for surface mount applications. It operates across a temperature range of -40°C to 150°C (TJ) and supports gate drive voltages from 4.5 V to 10 V, with a maximum Vgs of ±20V. This MOSFET is commonly found in power supply units, motor control, and power management systems across various industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta), 136A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3970 pF @ 15 V |
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