IRF6611TRPBF
MOSFET N-CH 30V 32A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF6611TRPBF is an N-Channel MOSFET with a 30V drain-source voltage. This device features a low on-resistance of 2.6mOhm maximum at 27A and 10V Vgs, and a continuous drain current of 32A at 25°C ambient and 150A at 25°C case. The gate charge is 56 nC maximum at 4.5V Vgs, with input capacitance at 4860 pF maximum at 15V Vds. Designed for surface mounting in the DirectFET™ Isometric MX package, it offers a power dissipation of 3.9W ambient and 89W case. Operating temperature ranges from -40°C to 150°C. This component is utilized in applications requiring high current density and efficient switching.
Additional Information
Series: HEXFET®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 27A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.9W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4860 pF @ 15 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
