IRF6611
MOSFET N-CH 30V 32A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6611 is a 30 V N-Channel MOSFET designed for high-performance applications. This DirectFET™ Isometric MX packaged component offers a continuous drain current of 32A at ambient temperature and 150A at case temperature, with a maximum power dissipation of 3.9W (Ta) and 89W (Tc). Key electrical characteristics include a low Rds(on) of 2.6mOhm at 27A and 10V, a gate charge of 56 nC at 4.5V, and an input capacitance of 4860 pF at 15V. It operates across a temperature range of -40°C to 150°C and is available in Tape & Reel packaging. This MOSFET is suitable for use in power supply, motor control, and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MX |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 27A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.9W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | DIRECTFET™ MX |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4860 pF @ 15 V |
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