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IRF6610TR1PBF

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IRF6610TR1PBF

MOSFET N-CH 20V 15A DIRECTFET

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies HEXFET® IRF6610TR1PBF is an N-channel Power MOSFET designed for high-efficiency power management solutions. This component features a 20 V drain-source breakdown voltage and a continuous drain current capability of 15 A at ambient temperature and up to 66 A at case temperature. The low on-resistance of 6.8 mOhm at 15 A and 10 V gate-source drive, coupled with a low gate charge of 17 nC at 4.5 V, ensures minimized conduction and switching losses. With a maximum power dissipation of 2.2 W at ambient and 42 W at case temperature, it is suitable for demanding applications. The device utilizes Infineon's advanced DirectFET™ Isometric SQ packaging for efficient heat dissipation and mounting. Key parameters include a maximum gate-source voltage of ±20 V, a threshold voltage of 2.55 V, and input capacitance of 1520 pF. This MOSFET is commonly employed in power supplies, automotive electronics, and industrial control systems.

Additional Information

Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDirectFET™ Isometric SQ
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Ta), 66A (Tc)
Rds On (Max) @ Id, Vgs6.8mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id2.55V @ 250µA
Supplier Device PackageDIRECTFET™ SQ
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1520 pF @ 10 V

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