IRF6609TRPBF
MOSFET N-CH 20V 31A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel MOSFET, part number IRF6609TRPBF, features a 20V drain-source voltage and a continuous drain current of 31A at 25°C ambient and 150A at 25°C case. This DirectFET™ Isometric MT packaged component offers a low on-resistance of 2mOhm maximum at 31A and 10V Vgs. Gate charge is 69 nC maximum at 4.5V Vgs, with input capacitance at 6290 pF maximum at 10V Vds. Power dissipation capabilities are 1.8W ambient and 89W case. Operating temperature range is -40°C to 150°C. This device is suitable for applications in power management and high-efficiency switching power supplies.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MT |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | DIRECTFET™ MT |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6290 pF @ 10 V |
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