IRF6609TR1
MOSFET N-CH 20V 31A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6609TR1 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 20V Drain-Source Voltage (Vdss) and a continuous drain current capability of 31A at ambient temperature and 150A at case temperature. The IRF6609TR1 offers a low on-resistance of 2mOhms at 31A and 10V Vgs, ensuring minimal conduction losses. Key specifications include a maximum gate charge (Qg) of 69 nC at 4.5V Vgs and an input capacitance (Ciss) of 6290 pF at 10V Vds. With a maximum power dissipation of 1.8W at ambient and 89W at case temperature, this MOSFET is suitable for demanding thermal environments. The device utilizes Infineon's advanced MOSFET technology and is packaged in a Surface Mount DIRECTFET™ Isometric MT, supplied on a Tape & Reel (TR). It operates across a temperature range of -40°C to 150°C (TJ). This component is commonly found in power management solutions for automotive, industrial, and consumer electronics.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MT |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | DIRECTFET™ MT |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6290 pF @ 10 V |
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