IRF6609
MOSFET N-CH 20V 31A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF6609, offers a 20V drain-source breakdown voltage and a continuous drain current of 31A at 25°C ambient, scaling to 150A at 25°C case temperature. This device features a low on-resistance of 2mOhm maximum at 31A and 10V Vgs, enabled by its advanced MOSFET technology. The IRF6609 is housed in a DirectFET™ Isometric MT package, suitable for surface mounting and designed for efficient thermal management, with a maximum power dissipation of 1.8W (ambient) and 89W (case). Key parameters include a maximum gate charge of 69nC at 4.5V Vgs and input capacitance of 6290pF at 10V Vds. Operating temperatures range from -40°C to 150°C. This component is widely utilized in power conversion applications across automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MT |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 31A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | DIRECTFET™ MT |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6290 pF @ 10 V |
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