IRF6608TR1
MOSFET N-CH 30V 13A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF6608TR1, a N-Channel MOSFET, offers a 30V drain-source breakdown voltage and a continuous drain current of 13A at ambient temperature, scaling to 55A at case temperature. This component features a low on-resistance of 9mOhm at 13A and 10V Vgs. The DirectFET™ Isometric ST package facilitates efficient thermal management, with a maximum power dissipation of 2.1W (Ta) and 42W (Tc). Gate drive voltages range from 4.5V to 10V, with a maximum gate-source voltage of ±12V and a gate charge of 24nC at 4.5V. Input capacitance (Ciss) is 2120pF at 15V. Operating across a temperature range of -40°C to 150°C, this MOSFET is suitable for applications in power management, automotive electronics, and industrial control systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric ST |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | DIRECTFET™ ST |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2120 pF @ 15 V |
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