IRF6608
MOSFET N-CH 30V 13A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6608 is a directFET™ N-Channel power MOSFET designed for high-efficiency power conversion applications. This component features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 13A at 25°C ambient, scaling to 55A at 25°C case temperature. The low on-resistance (Rds On) of 9mOhm at 13A and 10V gate-source voltage ensures minimal conduction losses. Key parameters include a gate charge (Qg) of 24 nC maximum at 4.5V and input capacitance (Ciss) of 2120 pF maximum at 15V. With a maximum power dissipation of 2.1W ambient and 42W case, the IRF6608 is suitable for demanding thermal designs. It operates across a temperature range of -40°C to 150°C. This MOSFET is packaged in a DirectFET™ Isometric ST, supplied on tape and reel, and is commonly utilized in automotive, industrial, and computing power supply systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric ST |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | DIRECTFET™ ST |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2120 pF @ 15 V |
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