IRF6607
MOSFET N-CH 30V 27A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6607 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 27A at ambient temperature and 94A at case temperature. The low on-resistance of 3.3mOhm at 25A and 10V gate-source voltage, driven by a 4.5V to 7V gate drive, minimizes conduction losses. With a maximum gate charge of 75 nC at 4.5V and input capacitance of 6930 pF at 15V, it supports efficient switching. The IRF6607 offers a power dissipation of 3.6W at ambient and 42W at case temperature, with an operating junction temperature range of -40°C to 150°C. Packaged in a Surface Mount DirectFET™ Isometric MT, this component is suitable for demanding applications in computing, power supplies, and industrial systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MT |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 94A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DIRECTFET™ MT |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 7V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6930 pF @ 15 V |
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