IRF6604TR1
MOSFET N-CH 30V 12A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6604TR1 is a 30V N-Channel Power MOSFET in a DirectFET™ MQ package. This device offers a continuous drain current of 12A at 25°C ambient and 49A at 25°C case temperature, with a maximum power dissipation of 2.3W (ambient) and 42W (case). Key characteristics include a low Rds(On) of 11.5mOhm at 12A and 7V, and a gate charge of 26 nC at 4.5V. Operating across a temperature range of -40°C to 150°C, this MOSFET is suitable for applications in computing, power management, and industrial automation. The DirectFET™ technology provides enhanced thermal performance and reduced parasitic inductance.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MQ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 49A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 12A, 7V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | DIRECTFET™ MQ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 7V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2270 pF @ 15 V |
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