IRF6603
MOSFET N-CH 30V 27A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF6603 is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 30V Drain-Source Voltage (Vdss) and a continuous drain current capability of 27A at 25°C ambient and 92A at 25°C case temperature. The IRF6603 offers a low on-resistance of 3.4mOhm maximum at 25A and 10V, with a drive voltage range of 4.5V to 10V. Its advanced DIRECTFET™ Isometric MT package provides excellent thermal management, supporting power dissipation up to 3.6W (Ta) and 42W (Tc). Key parameters include a maximum gate charge of 72 nC at 4.5V and input capacitance of 6590 pF at 15V. The IRF6603 is suitable for use in power management, automotive, and industrial automation sectors. Operating temperature range is -40°C to 150°C (TJ). This component is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MT |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 92A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DIRECTFET™ MT |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6590 pF @ 15 V |
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