IRF6602
MOSFET N-CH 20V 11A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel MOSFET, part number IRF6602, offers 20V drain-source breakdown voltage and 11A continuous drain current at 25°C ambient, scaling to 48A at 25°C case temperature. This device features a low Rds(on) of 13mOhm maximum at 11A and 10V Vgs, with a specified gate charge of 18 nC maximum at 4.5V Vgs. The input capacitance (Ciss) is 1420 pF maximum at 10V Vds. The IRF6602 is packaged in a DirectFET™ Isometric MQ surface-mount package, supplied on tape and reel. It supports gate drive voltages from 4.5V to 10V, with a maximum Vgs of ±20V and a threshold voltage (Vgs(th)) of 2.3V maximum at 250µA. Maximum power dissipation is 2.3W ambient and 42W case. This component is suitable for applications in power management and high-frequency switching.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MQ |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | DIRECTFET™ MQ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1420 pF @ 10 V |
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