IRF6601
MOSFET N-CH 20V 26A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the HEXFET® IRF6601, a high-performance N-Channel Power MOSFET. This device features a 20V Drain-Source voltage (Vdss) and a continuous drain current capability of 26A at ambient temperature (Ta) and 85A at case temperature (Tc). With a low on-resistance (Rds On) of 3.8mOhm at 26A and 10V, it offers efficient power handling. The IRF6601 utilizes advanced MOSFET technology and is housed in the compact DirectFET™ Isometric MT surface mount package, supplied on tape and reel. Key parameters include a gate charge (Qg) of 45 nC at 4.5V and an input capacitance (Ciss) of 3440 pF at 15V. Its maximum power dissipation is rated at 3.6W (Ta) and 42W (Tc). This component is suitable for applications in power management, automotive, and industrial systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MT |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta), 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | DIRECTFET™ MT |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3440 pF @ 15 V |
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