IRF640NSTRRPBF
MOSFET N-CH 200V 18A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF640NSTRRPBF is a N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 18A at 25°C (Tc). The device offers a low On-Resistance (Rds On) of 150mOhm at 11A and 10V gate drive. With a maximum power dissipation of 150W (Tc), it is suitable for high-power switching and power management tasks. The IRF640NSTRRPBF utilizes a D2PAK surface mount package (TO-263-3, D2PAK) and operates across a temperature range of -55°C to 175°C (TJ). Key parameters include a Gate Charge (Qg) of 67 nC at 10V and an Input Capacitance (Ciss) of 1160 pF at 25V. This MOSFET is commonly employed in industrial power supplies, motor control, and lighting applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 25 V |
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