IRF640NSPBF
MOSFET N-CH 200V 18A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF640NSPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) capability of 18 A at 25°C (Tc). The Rds(On) is specified at a maximum of 150 mOhm at 11 A and 10 V, with a Gate Drive Voltage of 10 V. Key parameters include Input Capacitance (Ciss) of 1160 pF (Max) at 25 V and Gate Charge (Qg) of 67 nC (Max) at 10 V. With a maximum power dissipation of 150 W (Tc), this device is suitable for demanding power management tasks. The IRF640NSPBF is housed in a TO-263-3, D2PAK package, facilitating surface mounting. Its operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in power supplies, motor control, and lighting applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 25 V |
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