IRF640NPBF
MOSFET N-CH 200V 18A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® MOSFET, part number IRF640NPBF, is a high-performance N-Channel power MOSFET. It features a Drain-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 18A at 25°C. With a maximum Rds On of 150mOhm at 11A and 10V, this device offers efficient switching characteristics. The IRF640NPBF is packaged in a TO-220AB through-hole configuration and supports a maximum power dissipation of 150W. Key parameters include a Gate Charge (Qg) of 67 nC at 10V and an input capacitance (Ciss) of 1160 pF at 25V. This component is suitable for applications in industrial power supplies and motor control.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 25 V |
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