IRF640NLPBF
MOSFET N-CH 200V 18A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF640NLPBF is an N-Channel power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vds) of 200V and a continuous Drain Current (Id) of 18A at 25°C. With a maximum power dissipation of 150W (Tc) and a low on-resistance of 150mOhm at 11A and 10V gate drive, it offers robust performance. Key parameters include a gate charge (Qg) of 67 nC at 10V and input capacitance (Ciss) of 1160 pF at 25V. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is housed in a TO-262-3 Long Leads package, suitable for through-hole mounting. Its capabilities make it relevant for use in industrial power supplies, motor control, and automotive electronics.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
